| PART |
Description |
Maker |
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| UF3001 UF3002 UF3003 UF3004 UF3005 UF3006 UF3007 |
Ultra Fast Recovery Pack: DO-201AD
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE拢潞50 TO 1000V CURRENT拢潞 3.0A
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE?0 TO 1000V CURRENT 3.0A
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE?0 TO 1000V CURRENT?/a> 3.0A
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE?0 TO 1000V CURRENT?3.0A
|
Gulf Semiconductor
|
| SSR20C100CT |
Schottky Silicon Carbide
|
Solid States Devices, Inc
|
| GC2X100MPS06-227 |
Silicon Carbide Schottky Diode
|
GeneSiC Semiconductor, ...
|
| C3D08065I |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| GA50JT06-CAL-15 |
OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| C3D08065A |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| SDP04S6008 SDT04S60 SDD04S60 |
Silicon Carbide Schottky Diode
|
Infineon Technologies AG
Infineon Technologies A...
|
| SSR05C601 SSR05C50 |
SILICON CARBIDE SCHOTTKY RECTIFIER
|
Solid States Devices, Inc
|
|
